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Oxide Growth

The process we call oxide growth is better decribed as the conversion of silicon on the surfase of a silicon wafer to silicon dioxide.  Steam or oxygen is used to oxidize the surface silicon.  This is done at high temperature (800 to 1150c) in an oxidation furnace.

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Equipment name & Badger ID Image Cleanliness Gases Substrate Size Process Temperature Range Material Thickness Range Maximum Load Notes
Thermco1
thermco1
Clean
700 °C - 1100 °C
25 Å - 2 μm
50

Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.

Thermco3
thermco 3
Clean
700 °C - 1100 °C
25 Å - 2 μm
50

Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.

Thermco4
thermco4
Flexible
700 °C - 1100 °C
25 Å - 2 μm
50

Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.