AMAT Centurion Epitaxial System (epi2)
Overview
The Applied Centura Epi system allows a range of temperatures and pressures to deposit epitaxial and polycrystalline silicon, germanium and silicon-germanium films. It can also perform H2 anneals. Included gases on the tool: AsH3, B2H6, GeH4, SiClH4, SiH4, PH3.
Cleanliness:
Processing Technique(s)
Capabilities and Specifications
Cleaning Required:
Pre-Diffusion Clean
Lab Supplied Materials
Material Thickness Range: 50.0 Å - 3.0 μm
Process Temperature Range:
600 °C - 1200 °C
Gases
Substrate Sizes
Maximum Load:
1
Notes:
N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
Lab Organization, Location, and NEMO Information
Lab Organization:
Location:
NEMO Area:
SNF: Chemical Vapor Deposition
NEMO ID:
epi2
Training and Maintenance
Lab Facility:
Training Charges:
4.00 hours
Primary Trainer:
Backup Trainer(s):
Primary Maintenance:
Steps to become a tool user
-
Become a member of SNF.
- Study the relevant operating procedures:
- Shadowing is required. Contact a qualified lab member of the tool to arrange to ‘shadow’. It would be best to find someone who has used the system often. If you don’t know of anyone, you may check reservations or history to find a qualified user. We recommend that you be with the lab member for the full time while operating the tool and ask lots of questions during the shadowing. You may have to shadow a qualified user more than one time to be comfortable with the tool. Please follow the instructions on this form: Shadowing at SNF
- Contact the primary trainer: Neel Mehta
