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Aix-ccs (aix-ccs)

Overview

aix-ccs MOCVD

Aixtron MOCVD for III-N semiconductors: InN, GaN, AlN, InGaN, InAlN, AlGaN, InGaAlN. Aix-ccs is a vertical metal organic chemical vapor deposition (MOCVD) system from Aixtron. It is a III-N system with a vertical closed coupled showerhead reactor, installed with a 1 by 4-inch susceptor and a 3 by 2-inch susceptor. It is categorized as contaminated tool in general but is a clean MOCVD so only accepts clean substrates. The system has been well calibrated for 4-inch wafer, while pieces and 2-inch wafer are available too.

Cleanliness: 

Capabilities and Specifications

Cleaning Required: 
Material Thickness Range: 0.0 - 5.0 μm
Process Temperature Range: 
400 °C - 1300 °C
Maximum Load: 
4"x1, 2"X3, pieces
Notes: 

N and P doping available.
For Si clean: SC1, SC2, HF dip.
For Sapphire clean: SC1, SC2.
For GaN template on Si or Sapphire: Piranha, SC1, SC2.

Lab Facility, Location, and Badger Information

Lab Organization: 
Badger Area: 
Badger ID: 
aix-ccs

Training and Maintenance

Lab Facility: 
Training Charges: 
4.00 hours
Primary Trainer: 
Primary Maintenance: 

Steps to become a tool user

  1. Become a member of SNF.
  1. Read the relevant operating procedures:
  2. Contact the primary trainer: for training schedule.

Operating Instructions